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Each NAND flash cell is essentially a modified transistor, specifically a MOSFET (metal-oxide-semiconductor field-effect transistor) with an additional “floating gate” or, in modern 3D NAND, a charge trap layer. This isolated structure is sandwiched between insulating layers of oxide, allowing it to trap and retain electrical charge (electrons) even when power is off.
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Iran enters critical talks on its nuclear programme with the US on Thursday, insisting a deal is in reach as long as Washington sticks by its willingness to concede Iran’s symbolic right to enrich uranium, allow Tehran to dilute its stockpile of highly enriched uranium, and not to impose controls on Iran’s ballistic missile programme.
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